A Study of Solution-Processed Zinc–Tin-Oxide Semiconductors for Thin-Film Transistors

Thin-film transistors (TFTs) fabricated using solution-processed zinc-tin-oxide (ZTO) semiconductor thin films as the channel layers are proposed in this paper. Effect of the ZTO annealing temperature on the TFT performance is studied. Significant reduction of oxygen-vacancy and chlorine residue contents in the ZTO semiconductor can be obtained when the annealing temperatures are 500 °C-700 °C. The ZTO semiconductor with the annealing process at 600 °C in air can give an optimal ZTO TFT having a low leakage current of 10
^-12
A and a high ION/IOFF ratio of 3 x 10
⁷
. The subthreshold swing is 0.39 V/decade corresponding to an interface trap density of 1.2 x 10
¹²
cm
^-2
eV
^-1
.