Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al
₂
O
₃
as the gate dielectric layer. The proposed device reveals a threshold voltage (V
_TH
) of +2.3 V and a maximum drain current (I
_D,max
) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/OFF-state current (I
_ON
/I
_OFF
) ratio of 10
⁹
-10
¹⁰
, a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 μA/mm while keeping a low-specific ON-resistance (R
_ON,sp
) of 1.04 mQ·cm
²
. This novel E-mode device presents a great potential for power device applications.