Simulation of Strain-Assisted Switching in Synthetic Antiferromagnetic Free Layer-Based Magnetic Tunnel Junction

We perform macrospin simulations on a magnetic tunnel junction structure with perpendicular magnetic anisotropy, in which the conventional free layer is substituted with synthetic antiferromagnetic free layers to improve the thermal stability. In order to reduce the switching current Pb(Zr0.2Ti0.8)O3 material with (001) surface orientation is adopted, which is adjacent to the second free layer so that it applies biaxial stress to the interface under external voltage. We solve the Landau-Lifshitz-Gilbert-Slonczewski equation incorporating thermal and strain fields to describe the transient dynamics of magnetizations in both the free layers. The simulation results show a substantial reduction in switching current and significantly enhanced switching probability by modulating current and strain pulses.