An Ultralow Turn-Off Loss SOI-LIGBT With a High-Voltage p-i-n Diode Integrated on Field Oxide

A novel ultralow turn-off loss silicon-on-insulator-lateral insulated-gate bipolar transistor (LIGBT) is proposed and investigated by numerical simulations. The proposed LIGBT features a high-voltage p-i-n diode integrated on the field oxide that is located upon the surface of the drift region. The p-i-n diode serves as a high-voltage level shifter, and the gate signal of the LIGBT can be transmitted to the anode side of the LIGBT to control a low-voltage circuit which is used to short the p-anode/n-buffer junction when the device is turning off. Thus, the injection of the holes from the p-anode region into the n-drift region is prevented, and the turn-off speed of the proposed LIGBT is significantly improved in comparison with the conventional one. The numerical simulation results reveal that the turn-off loss of the proposed 352-V LIGBT is 43.1% of the conventional LIGBT at VON = 1.38 V.