Analysis of Negative-Capacitance Germanium FinFET With the Presence of Fixed Trap Charges

In this paper, the effect of negativecapacitance (NC) on germanium FinFET (GeFinFET) with the presence of fixed trap charges (Nftc) has been studied. The analysis of various parameters of NCGeFinFET has shown that the positive trap charges improve the device characteristics whereas the negative trap charges (NTC) degrade the performance of devices. Therefore, we have optimized properties of ferroelectric (FE) to suppress the degradation caused by NTC. Furthermore, the impact of Nftc has been studied on the output characteristics of NCGeFinFET inverter, and it has been shown that the degradation due to NTC reduces by optimizing the FE properties. It has also been demonstrated that NCGeFinFET exhibits excellently improved characteristics as compared to GeFinFET.