Optimization of the silicon thickness on Back Enhanced (BE) SOI pMOSFET working as a visible spectrum light sensor

This paper reports the optimization of the silicon film thickness on the Back Enhanced (BE) SOI MOSFET working as a light sensor on the visible spectrum. The BE SOI MOSFET is a kind of undoped junction-less SOI transistor, which works as an n-type or p-type MOS, depending on the back bias conditions. The BE SOI underlap regions (drain/source to gate) are used as a light sensor that can be integrated on commercial UTB (Ultra Thin Body) SOI technologies. This paper is going to explore the sensitivity of the BE SOI MOSFET as a function of the silicon thickness (from 5 to 30nm) and for wavelengths from the ultraviolet-A (UV-A, λ ≈ 400 nm) to red (λ ≈ 635 nm) spectra. Experimental and simulated data indicate that the optimized silicon film t
_Si
is 15nm, where the generation and recombination influences present the highest sensitivity for the visible spectrum.