A 29.6 dBm 29-GHz Power Amplifier for Satellite and 5G Communications Using 0.15-μm GaAs p-HEMT Technology

This paper presents a power amplifier that performs well at both 28 GHz and 29 GHz for fifth generation mobile networks (5G) and satellite communications using 0.15-μm D-mode GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices. The power amplifier with two-stage common-source (CS) and four-way direct combining architecture attained a small signal gain of 16.1 dB, the output 1-dB compression power (OP1dB) of 29.1 dBm, and the power-added efficiency at OP1dB of 27% at 28 GHz under 6-V supply voltage. At 29 GHz the small signal gain is 16 dB, the OP1dB is 28.6 dBm, and the power-added efficiency at OP1dB is 24.6% under 6-V supply voltage.