A Ka-Band Sub-Harmonically Pumped Mixer Using Diode-Connected MOSFET for 5G MM-Wave Transceivers

A Ka-band (27-40-GHz) sub-harmonically pumped mixer (SPM) fabricated in 180-nm CMOS technology is demonstrated for 5G mm-wave transceivers in this paper. The proposed SPM is composed of anti-parallel gate-source connected FET diode pair (APDP). The SPM measuring 0.48 mm
²
demonstrates a conversion-gain response of -16.8 ~-12.4 dB for both upand down-conversion over 27-40 GHz, the required LO frequency from 13.5 to 20 GHz, and a high 2LO-to-RF isolation of 60 ~ 80 dB.