A 140–210 GHz Low-Power Vector-Modulator Phase Shifter in 130nm SiGe BiCMOS Technology

This paper presents the design and characterization of a vector-modulator phase shifter capable of low-power operation in the frequency band from 140 GHz to 210 GHz. A continuous phase control over 360° is demonstrated for 9.5 dB insertion loss. The component power-consumption is 8.6 mW, and its active area is 0.075 mm
²
. A 130 nm SiGe BiCMOS technology featuring a maximum frequency of oscillation of 450 GHz is chosen for the circuit prototyping. The demonstrated results are enabled by a novel architecture which simplifies the layout, it reduces the silicon footprint and the dissipated power. Inductive-peaking techniques are also used to minimize the insertion loss associated with the component. To the best knowledge of the authors, the circuit demonstrates the smallest silicon footprint and one of the lowest dissipated powers for comparable insertion losses among vector-modulator phase shifters operating at millimeter wave frequencies.