23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) have become good candidate for microwave power amplifier application. Furthermore, by combining the high power and the low noise performance, GaN HEMTs also show a great potential in high linearity low noise amplifier application. In this report, a four-stage low noise amplifier using commercial 100 nm GaN on Silicon Technology is presented. The designed LNA achieves a noise figure of 2.2-2.8 dB and a small signal gain of 25-29 dB from 23 to 31 GHz. The output 3-dB compression point (P3dB) is in the 17 dBm range. The LNA works with only one DC power supply and has a chip size of 2.3mm×1mm, Compared with the existing Gallium Arsenic technology, this LNA has higher gain, higher linearity while keeping the noise figure at the same level.