High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM

We demonstrate a high-performance and cost-effective cross-point memory (CPM) technology for two-deck 128 Gb storage class memory (SCM). The unit MAT size is 16 Mb consisting of a 2z nm 1S1M (one selector one memory) structure that is patterned by only two ArF-i steps per deck for a low cost per bit. The formidable task of self-align etch is enabled by the use of state-of-the-art etching and integration technology, which otherwise easily leads to hard fail or poor cell characteristics and reliabilities. New phase change materials (N-PCMs) are developed to have a large V
t
window and a uniform V
t
distribution for a sufficient read window margin (RWM) and a corresponding low raw bit error rate (RBER). New chalcogenide selectors (NCSs) are also developed to provide low V
t
instability and very low leakage current. The new CPM is able to provide a sufficient RWM for 16 Mb MATs with very low latencies of write (set ≤ 300 ns) and read (≤ 100 ns). We also demonstrate its decent write disturbance and high reliabilities such as endurance and thermal retention.