Operation Behavior Under Extremely High Injection Level for GaN-Based Micron LED

In this work, we have fabricated the different diameter micro pillar
$\mu$
LEDs with different wavelength and on different substrates. The electroluminescence (EL) spectra and current-voltage (I-V) curves were measured. The high saturate current density was achieved as 300 kA/cm
²
for 20
$\mu$
UV LED on GaN substrate. Efficiency droop was also improved greatly for
$\mu$
EDs. Crosslight software was used to simulate the transport and recombination processes under the high injection level. Many-body effect was considered in the integrated quantum drift-diffusion model. The extreme high injection mechanism is discussed.