High Performance (001) $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky Barrier Diode

A Schottky barrier diode (SBD) without field plate was fabricated on a Si-doped N-Ga
₂
O
₃
drift layer, which was grown by halide vapor phase epitaxy (HVPE) on a heavily Sn-doped (001) β-Ga
₂
O
₃
substrate. The thickness and concentration of N-drift layer were 5 μm and 3.8×10
¹⁶
cm
^-3
, respectively. The reverse breakdown voltage (BV) and specific on-resistance (Ron) of the fabricated Ga
₂
O
₃
SBD were 825 V and 3.5 mΩ·cm
²
, respectively, leading to a high Baliga figure-of-merit (BV
²
/Ron) of 194.5 MW·cm
^-2
. Besides, a high current on/off ratio of 4.2×10
¹⁰
was obtained.