D Band Active Integrated Frequency Doubler MMIC Based on InP HEMT Technology

This paper presents the design and simulation of a D-band active integrated frequency-doubler MMIC with a 70-nm InAIAs/lnGaAs/lnP pseudomorphic high electron-mobility transistor (PHEMT) technology. The doubler MMIC is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25μrn gate length PHEMT. Without the use of post-amplification, the frequency-doubler generates an output power more than 0 dBm range from 135 to 165 GHz with an input power of 4.5 dBm, that is, a 3-dB bandwidth of 20% has been achieved. The maximum output power of 1.58 dBm at 143 GHz. At the same frequency, the MMIC exhibits a conversion gain up to -2.9 dB, with high suppressions of 21.6 dB, 33.7 dB on the fundamental, and the third harmonics respectively. The total DC consumption of frequency-doubler MMIC is about 19.6 mW.