A Feedback GaN HEMT Oscillator

This letter studies a feedback GaN HEMT oscillator implemented with the WIN 0.255μm GaN HEMT technology. The oscillator consists of a HEMT amplifier with an LC feedback network. With the supply voltage of VDD = 1.8 V, the GaN VCO current and power consumption of the oscillator are 10.18 mA and 18.33mW, respectively. The oscillator can generate single-ended signal at 7.26GHz and it also supplies output power 1.06 dBm. At 1MHz frequency offset from the carrier the phase noise is -122.48 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm
²
.