Analysis of Trade-Off Between Noise and Wide Band-Gap (WBG) Device Switching Speed

Advanced power semiconductor devices, especially wide band-gap (WBG) devices, have inherent capability for fast switching. However, in order to prevent the noise induced by fast voltage and current slew rate from false triggering devices, the switching speed needs to be limited. This paper focuses on analysis mechanism of the PWM and gate noise pulse in fast switching half-bridge (HB) circuits. Analytical models of noises and quantitative relationship between noises and voltage, current slew rate (dv/dt, di/dt) are derived to address the switching speed limitation from noise point of view. An exhaustive investigation into the impact of circuit parameters on the limitation is conducted and the design consideration for improving the switching speed limitation is given. The analysis is verified in Spice based system model simulation.