Covered Source–Channel Tunnel Field-Effect Transistors With Trench Gate Structures

We propose a new design for covered source–channel tunnel field-effect transistors (CSC-TFETs) with trench gate structures. The
I
–
V
characteristics,
on
/
off
current ratio, subthreshold swing, and band-to-band tunneling rate are analyzed using a commercial device simulator. Our proposed CSC-TFETs exhibit an
on
/
off
current ratio of approximately 10
¹⁰
, an
on
-current of approximately 10
⁻⁵
A/μm at room temperature, and a subthreshold swing of less than 40 mV/decade. In addition, the
on
-current of the CSC-TFETs is ∼233 times that of conventional TFETs, demonstrating that the switching characteristics are superior to those of other silicon-based TFETs. Moreover, a CSC-TFET inverter is characterized by SPICE calibration and provides a high frequency of approximately 1 GHz at a supply voltage of 1.0 V.