450 GHz $f_{\text{T}}$ SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

This paper deals with the optimization of a Si/SiGe HBT featuring an implanted collector and a DPSA-SEG emitter-base architecture. Arsenic and phosphorous doping species are studied. On the one hand, both silicon defects and dopants profiles control are evaluated and on the other hand, hf performances are presented. Carbon-phosphorous co-implantation is also investigated and a state-of-the-art 450 GHz fT HBT compatible with 55-nm MOSFETs is demonstrated through a device layout study.