Structural, Optical and Electrical Characterization of Heterojunction Rib-Si Solar Cells

Heterojunction Rib-Si solar cells have been developed aiming at very thin Si solar cells. Structural, optical and electrical characterization of Rib-Si solar cells with a thickness of 80-100μm was performed. TEM cross sectional observation revealed that amorphous Si:H is more easily crystallized on the (100) plane than the (111) plane. The EL external quantum efficiency is currently about 0.1% for Rib-Si solar cells with 1 sun Voc of 0.68-0.71V. Furthermore, characteristic mapping of Rib-Si solar cells was attempted and an enhancement of about 10 mV in open circuit voltage could be recognized in thin region.