Hydrogenated silicon sub-oxide film for an effective and thermal stable silicon surface passivation

Scope of the work is to get a comprehensive study on electrical and optical characteristics of SiO
_x
:H film within the role of CO
₂
and H
₂
in the film growth and composition and on how the Oxygen addition changes the film structure and Hydrogen inclusion in the amorphous matrix and their chemical bonding with silicon. We monitored the effective lifetime t
_EFF
and FTIR spectra on as-deposited and thermal treated samples to understand the passivation mechanism,correlating wafer lifetime and Hydrogen inclusion in sub-oxide film. H
₂
dilution in the gas mixture was the key to enhances passivation quality on c-Si wafers.