Application of Quasi-Static I-V Characterization for Channel Temperature Determination in InAIN/GaN HEMT

In this work an average channel temperature of power InAIN/GaN HEMT prepared on SiC substrate has been investigated using quasi-static 1-V characterization. The analysis of drain current change depending on source resistance, threshold voltage and saturation velocity drop was utilized and used for temperature versus dissipated power calculations in differential form. The source resistance and threshold voltage were determined experimentally by measurements of output and transfer characteristics at different ambient temperatures whereas saturation velocity relative drop was used from available resources. Obtained results were compared with simulations.