FinFETs for RF Applications: A Literature review

Recent studies on FinFET pointed out the advantage of immunity from short channel effects (SCEs) and their performances at high frequencies need attention. In this paper, we review the potentiality of FinFET structure for high frequency applications. The challenges factors such as capacitance and noise are discussed. The development of analytical model for parasitic capacitance and noise are reviewed. It is necessary for accurate quantitative prediction of the parasitic and noise introduced by each part of the device structure. In addition generalized modeling approach based on artificial neural network is presented which helps in developing model with less computation time.