An In-depth Study of High-Performing Strained Germanium Nanowires pFETs

An in-depth study of scaled nanowire Ge pFETs for digital and analog applications is proposed. Improved device characteristics are first obtained after gaining a good understanding of the HPA on device performance. Up to 45% higher ID,SAT is obtained at I
_OFF
=3nA/fin when comparing to best Si GAA nFET and similar ID,SAT is found when benchmarking to mature 14/16nm pFinFET technology at -0.5 V
_DD
. The temperature dependent study of I
_D,SAT
highlights that the mechanism limiting the transport in Ge at short channel are neither purely diffusive nor fully ballistic.