A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

This paper presents a new lumped-charge approach-based physical model for high power soft-punchthrough (SPT) insulated gate bipolar transistor (IGBT). The IGBT physical models should consider the fabrication technologies used to optimize the device behavior for specific applications. The proposed model focuses on the chip structure designed by ABB for high power IGBT and can apply to other IGBTs with homogeneous structures. Based on the SPT+ concept combined with an enhanced planar cell design for the optimization of lower power losses, different particular mathematical approaches are used to describe their functions in the proposed model. The temperature dependence of the model is also included because the chip temperature of IGBT in practical applications is higher than the room temperature and changed with service conditions. The physics-based IGBT model has been implemented in PSpice and validated with experiments, which considers both the block voltage nonpunchthrough condition and punchthrough condition during turn-OFF transient. The simulation results show a good agreement with the experiment results.