Design and Fabrication of the Silicon-based Integrated MIM Capacitors

Through the silicon-based passive device integration technology to realize the miniaturization of electronic components has become an important technical path. This paper aims at MIM silicon based integrated capacitor, which uses HFSS software to establish its structural model, and the C values and characteristic impedances of the same structural parameters (Ti/Cu plate, Al
₂
O
₃
dielectric) and different plate size / dielectric layer thickness are simulated and analyzed; Finally, the MIM capacitor was completed on the silicon oxide substrate, and the capacitance was tested. The test results are in good agreement with the simulation results, which verify the rationality of the silicon-based integrated MIM capacitor design and fabrication process.