Magnetic and Transport Properties of Co1+xFeV1−xSi Epitaxial Films Grown by Molecular Beam Epitaxy

We study magnetic and transport properties of Co
_1+x
FeV
_1-x
Si epitaxial films grown by molecular beam epitaxy. Even though we co-evaporate each element with stoichiometry, Co-rich and V-poor CoFeVSi films are obtained, which results in a relatively large value of the saturation magnetic moment compared with the theoretical value. However, for the nonstoichiometric films, electrical and magnetotransport properties indicate a spin-gapless semiconductor-like electronic band structure.