Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack

In this work, we investigate CMOS compatible oxygen-inserted Silicon (OI) n-channel MOSFETs with high-K/metal gate stack. Initial results for high-K/metal gate OI transistors show (i) 2.7× lower gate leakage for matched electrical oxide thickness, T
_OX,E
and (ii) 23% increased room temperature electron mobility at 0.6MV/cm E
_eff
, consistent with previous reports on OI Si MOSFETs with SiON/Poly-Si gate stack.