Analysis and Modeling of Current Mismatch in Laterally Nonuniform MOSFETs

We present an analytical modeling approach for drain current (I
_D
) mismatch in lateral nonuniformly doped (NUD) MOSFETs. The model uses the carrier number fluctuation theory to include the effect of random dopant fluctuations (RDFs) on inversion charge fluctuation (ICF) in different operating regions. Our analysis shows that the conventional models for uniformly doped device underestimate the I
_D
mismatch by one-to-two orders of magnitude at low gate voltages in NUD devices. We have also considered the effect of RDF on mobility fluctuation (MF), which shows its significant role in strong inversion (SI). To investigate the physical mechanism leading to such a behavior, extensive technology computer-aided design simulations are performed for various conditions of bias, doping profiles, and temperature. Using the impedance field method to calculate the relative contributions of RDF to ICF and MF, we show that our model can successfully capture the drain current mismatch across subthreshold to SI in the NUD device.