Improvements in GeTe-based Phase Change RF Switches

Recent progress in GeTe-based phase-change RF switch technology will be presented. Use of tungsten micro-heat-ers in the inline phase change switch (IPCS) processes has improved device performance and reliability. Finite element simulations of the melt/quench process in GeTe for a thermally activated independent tungsten thin film heating element will be shown. A small (0.33mm × 0.61mm) series-shunt single-pole double-throw (SPDT) switch based on 3rd generation IPCS technology was built and characterized. The SPDT switch exhibited less than 1 dB insertion loss in the DC-65GHz bandwidth. We also report measured data of a wide-band, DC-65GHz, monolithic 4-bit attenuator circuit using IPCS technology.