Abstract:
We demonstrate a single wavelength operation from an InGaN/GaN distributed feedback (DFB) blue laser at 42X nm. The 39th order grating is etched in the sidewall to achiev...Show MoreMetadata
Abstract:
We demonstrate a single wavelength operation from an InGaN/GaN distributed feedback (DFB) blue laser at 42X nm. The 39th order grating is etched in the sidewall to achieve single wavelength. The laser has a FWHM of ~ 25 pm at 500mA pulsed current with 15 mW output power.
Published in: 2018 International Conference Laser Optics (ICLO)
Date of Conference: 04-08 June 2018
Date Added to IEEE Xplore: 16 August 2018
ISBN Information:
Citations are not available for this document.
Contents Cites in Patents (1)Patent Links Provided by 1790 Analytics
1.
MUZIOL, Grzegorz; TURSKI, Henryk; SZKUDLAREK, Krzesimir; HAJDEL, Mateusz; WOLNY, Pawel; SIEKACZ, Marcin; SKIERBISZEWSKI, Czeslaw, "DISTRIBUTED FEEDBACK LASER DIODE AND METHOD OF MAKING THE SAME"
Inventors:
MUZIOL, Grzegorz; TURSKI, Henryk; SZKUDLAREK, Krzesimir; HAJDEL, Mateusz; WOLNY, Pawel; SIEKACZ, Marcin; SKIERBISZEWSKI, Czeslaw
Abstract:
The diode has a layered structure made of group III nitrides deposited on a crystalline substrate (1) and comprising a lower n-type optical cladding (2), a lower waveguide (3), an active area (4), an upper waveguide (5), an electron blocking layer (6) and an upper p-type optical cladding (7). On top there is a mesa (9) with a periodic refractive index contrast area containing periodically distributed longitudinal grooves (11). On top of the upper p-type optical cladding (7), in the area of the mesa (9), there is a tunnel junction (8) covered from the top by an n-type current spreading layer (10). The longitudinal grooves (11) of the periodic refractive index contrast area are distributed parallel in respect to one another in the outer surface of the n-type current spreading layer (10) and run through the entire width of the mesa (9). The method consists in producing the above-mentioned structure in a process of plasma-assisted molecular beam epitaxy (PAMBE). After deposition of the upper p-type optical cladding (7), the tunnel junction layer (8) is deposited through epitaxy, followed by the formation of a mesa (9) reaching towards the crystalline substrate (1) up to the upper p-type optical cladding (7). On the formed mesa (9) an n-type current spreading layer (10) is deposited through epitaxy and then the mentioned periodically distributed parallel longitudinal grooves (11) are formed on its outer surface.
Assignee:
INSTYTUT WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK
Filing Date:
14 July 2019
Grant Date:
20 January 2021
Patent Classes:
Current International Class:
H01S0512000020, H01S0522300002, H01S0530000020, H01S0534300002
