Thermophotovoltaic Generation of Electricity With InAs0.91Sb0.09 Device

We report the efficient low-temperature thermophotovoltaic energy conversion with an experimentally available InAs
_0.91
Sb
_0.09
device. It is shown that this device has a spectrum-insensitive optimum doping profile, N
_d(a)
= 10
¹⁸⁽¹⁷⁾
cm
^-3
. With this optimum doping profile, it is further shown that for spectrum temperature lower than 1400 K, InAs
_0.91
Sb
_0.09
device shows thermal conversion efficiency superior to any reported GaInAsSb devices under the same spectrum illumination. For spectrum temperature ranging from 800 to 1400 K, device efficiency in the range of 8%-16% is promised for InAs
_0.91
Sb
_0.09
device.