Improved Staggered Through Silicon Via Inductors for RF and Power Applications

Inductors are important components for RF and power applications, in which high quality factors and large inductances with minimum footprints are critical. Compared to conventional 2D spiral inductors, 3D TSV inductors can achieve higher inductance values with smaller footprints. This paper focuses on the optimization of high-Q and high-density TSV inductors on lossy Si substrates. In a first step, technology aspects of the optimization will be discussed. Subsequently, a novel concept to improve the TSV inductor performance, based on a polymer wall as the shielding technique for the 3D TSV inductor will be introduced. Furthermore, to minimize the footprint and increase the inductor density, staggered TSV inductor configurations will be assessed. Finally, inductors with magnetic cores and air gaps show promising results for power application in the MHz frequency range.