Statistical analysis of CBRAM endurance

In this paper, we address endurance reliability of resistive RAM at array level. To this aim, Al
₂
O
₃
based Conductive Bridging RAM (CBRAM) kb arrays are studied. Maximum number of cycles the memory can sustain is statistically analyzed. Impact of SET and RESET conditions and Al
₂
O
₃
thickness on endurance distributions is discussed. Finally, gradual endurance degradation mechanism is discussed along with defect generation in the resistive layer.