Impact of Ge oxidation states in GeOx interfacial layer on electrical characteristics of Ge pMOSFETs

Effects of Ge oxidation states in GeO
x
interfacial layer (IL) on electrical characteristics of Ge pMOSFET with ~ 0.5 nm EOT are comprehensively studied. The gate leakage current density (J
G
) is impacted by contents of Ge
⁺¹
and Ge
⁺²
in GeO
x
IL. The hole mobility is influenced by content of Ge
⁺³
in GeO
x
IL. The Ge oxidation states in IL play crucial roles on Ge pMOSFET.