HEtero-layer-lift-off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs

Ultra-thin-body (UTB) germanium-on-insulator (GeOI) substrates have been fabricated utilizing advanced HEtero- Layer-Lift-Off (HELLO) technology. HELLO technology is effective in mitigating thickness fluctuation issue in UTB GeOI during Ge thinning process. As a result, well-known hole mobility degradation while scaling body thickness (t
body
) in UTB GeOI pMOSFETs has been suppressed. The mechanism of enhanced hole mobility in UTB GeOI pMOSFETs was also investigated through low temperature electrical measurement. The hole mobility in 9-nm-thick GeOI devices fabricated with HELLO technology showed larger temperature dependence, indicating the release of thickness fluctuation scattering.