Table-Based Model of a Dual-Gate Transistor for Statistical Circuit Simulation

Table-based models of semiconductor devices are an attractive solution if a physics-based analytical model of the device cannot be found or has insufficient accuracy. Moreover, table-based models offer easy tradeoff between evaluation speed and accuracy. Traditionally, the biggest disadvantage of this class of model has been the inability to take device variability into account. This paper presents a table-based model that can handle process-induced variations of multiple device parameters. The impact of those variations on device operation is modeled analytically using special transformations of the current-voltage and charge-voltage characteristics of the nominal (i.e., variation-free) device. In contrast to multidimensional interpolation between the I-V and Q-V curves of “corner” devices, the proposed approach is much less costly in terms of CPU time, RAM use, and time dedicated to device characterization. The model has been successfully used in statistical simulations of an amplifier and ring oscillator built with VeSFETs-dual-gate junctionless transistors.