A K-band power amplifier in a 0.15-um GaAs pHEMT process

A K-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) is designed using a 0.15 um Emode GaAs pHEMT process. The MMIC PA is designed with power combining technology. Simulation results show that the MMIC PA exhibits saturation output power (Psat) of 31 dBm with power added efficiency (PAE) higher than 27.3%, and power gain higher than 21.3 dB from 24 GHz to 28 GHz, the input return loss is lower than -13dB, and the output return loss is lower than -12dB in the working band. Furthermore, the chip size is 3mm*1.5mm including all the bonding pads.