Long term high temperature reverse bias (HTRB) test on high voltage SiC-JBS-diodes

In this paper, the result of a long term HTRB Test with a test time over 5000 hours on novel 3.3kV SiC-JBS-Diodes is presented. The diodes under test have an area of 5×5mm
²
with a p-stripe design and a JTE-based edge-termination. Two splits were tested, one with globtop cover underneath silicone gel potting and the other with gel potting only. Both splits show a significant decrease in leakage current over the course of the test. A different behavior of leakage current is observed when test conditions are reapplied after an interruption for intermediate measurements. It is evident that the leakage current is not only affected by the chip but also by the surrounding materials. Both splits passed over 5000 hours without failure.