Advanced n-channel LDMOS with ultralow specific on-resistance by 0.18 μm epitaxial BCD technology

An advanced n-channel LDMOS (nLDMOS) by 0.18 μm epitaxial BCD Technology is proposed with the best-in-class performance. Thin drift region oxidation by independent LOCOS process is adopted and optimized to improve the trade-off between breakdown voltage (BV) and specific ON-resistance (R
_{on, sp}
). Both P-Body and N-Drift region vertical doping optimization is developed accordingly to improve the reliability of the device. Both 20 V and 30 V nLDMOS devices are designed, and experimental results show that ultralow R
_{on, sp}
has been demonstrated (i.e., R
_{on, sp}
= 6.5 mΩ-mm
²
for BV = 27.6 V, R
_{on, sp}
= 9.6 mΩ mm
²
for BV = 37.3 V, respectively). Moreover, the electrical safe operating area (SOA) and hot-carrier injection (HCI) are also improved.