Benchmarking of multi-finger Schottky-Barrier tunnel FET for ultra-low power applications

In this work, the power, performance and area of novel multi-Finger Schottky-Barrier Tunnel FET (mFSB-TFET) are benchmarked with standard MOSFET and low-power MOSFET from device and circuit level. Under the same area penalty, mFSB-TFET circuits could obtain comparable delay with significantly lower static and total power consumption by orders of magnitude than standard MOSFET circuits. The advantages are more significant at ultra-low working voltage, even compared with low-power MOSFET circuits, indicating great practical potential of mFSB-TFET for ultra-low power application.