Double pulse test based switching characterization of SiC MOSFET

Switching characteristics of a 1200 V, 90 A SiC MOSFET in an asymmetric H-bridge power converter are measured. Double pulse tests are carried out at different current and voltage levels. The experimental set-up and procedure are explained in detail. The switching waveforms are used to obtain the voltage and current transition times of the MOSFET. The turn-on and turn-off energy losses are also calculated. Since these are influenced by layout of the power circuit, the power converter layout and its effect on the switching waveform are reported. The turn-off energy loss is lower than the data-sheet specified value, while the turn-on energy loss is higher; the total loss is close to the data-sheet value.