Charge-Based Model of Symmetric Double-Gate Organic Thin-Film Transistors

A physically based continuous analytic current-voltage model of symmetric double-gate (DG) organic thin-film transistors is presented. It is derived from a closed-form solution of Poisson's equation and is worked out without assuming the charge-sheet approximation. The model is based on the variable-range hopping and accounts for all regions of operation: linear, saturation and subthreshold. By preserving the proper physics, the model depicts the “volume accumulation,” that is a typically noncharge-sheet phenomenon characteristic of DG transistors. The model is verified by comparisons with the full numerical simulations and a good agreement is shown.