Double layer nanopore fabricated by FIB and TEM

In order to support the third generation DNA sequencing technique, a double layers nanopore consisting of silicon nitride (Si
3
N
4
) and graphene is fabricated in this paper. Firstly, high yield Si
3
N
4
nanofilm chips were manufactured successfully after SißNt deposition, etching and release process. Then, focused ion beam (FIB) was used to manufacture SißNi nanopore on Si
3
N
4
nanofilm chips with optimized process. The graphene sheet was synthesized with chemical vapor deposition (CVD) method and transferred onto the Si
3
N
4
membrane milling area. We use transmission electron microscope (TEM) to fabricate the nanopore in the graphene membrane above the center of the Si
3
N
4
nanopore. The diameter of SißNt layer was characterized to be 28 nm and the diameter of graphene nanopore was 4 nm which is fabricated by FIB and electron beam respectively. This method provides a useful tool to nanopore-based DNA sequence.