Monte Carlo benchmark of Ino.53Gao.47As-and Silicon-FinFETs

Performance of InGaAs-and Si-FinFETs is compared by Monte Carlo (MC) device simulation which reproduces measured transfer characteristics of InGaAs-and Si-FinFETs with 20 nm gate length and 9 nm fin width. MC simulation shows that InGaAs features similar performance as Si when reducing the supply voltage of the Si-FinFET to 0.5 V and outperforms Si in the absence of contact resistance and traps. However, the performance advantage of ideal InGaAs is found to be lost upon reducing the fin width to 5 nm because of the reduction of the inversion charge for a narrower fin due to n-type channel doping. On the modeling side, a strong effect of the wave-function penetration into the oxide is demonstrated which is considered in the quantum correction for MC. Finally, a comparison between NEGF-and subband-Boltzmann transport equation solutions shows that source-to-drain tunneling increases the off-current only by a factor of about three at 10 nm gate length.