Ultra-low contact resistance for deca-nm MOSFETs by laser annealing

We demonstrate an ultra-low contact resistance of 4/spl times/10/sup -8/ /spl Omega/-cm/sup 2/ (5/spl times/ lower than RTA) using a laser annealing (LA) process. The contact resistance reduction is attributed to the high activated dopant concentration of 10/sup 21/ cm/sup -3/. For the first time, we have successfully fabricated LA-pMOSFETs with a conventional CMOS integration flow for lowering contact resistance.