Study and fabrication of PIN photodiode by using ZnSe/PS/Si structure

In this experiment, the PIN photodiode by using ZnSe/porous Si/Si structure was investigated. The single crystal ZnSe epilayer is successfully grown on porous silicon substrate with CVD system. Indium is as a dopant to reduce the resistivity of ZnSe intrinsic layer. To control the different thickness of n-ZnSe layer will change the photocurrent and responsivity of the ZnSe PIN diode. The best diffusion conditions are diffusion temperature of 300/spl deg/C and driving time of 30 min. The responsivity of device is 0.03 A/W. In addition, the dark current of the photodiode is near zero.