Impact of dielectric material and oxide thickness on the performance of Carbon Nanotube Field Effect Transistor

This paper demonstrates the performance of Carbon Nanotube Field Effect Transistor (CNTFET) in ballistic regime. It shows the effect of dielectric material and oxide thickness on different performance parameters of device like Carrier Injection Velocity (v
_inj
), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), Transconductance (g
_m
), Output Conductance (g
_d
) and Voltage Gain (Av). The results illustrate that although Silicon dioxide (SiO
₂
) has lowest SS, but still it cannot be used as a dielectric medium in CNTFETs due to high DIBL, lower g
_m
, g
_d
and Av. On the other hand, Zarconium Oxide (ZrO
₂
), Hafnium Oxide (HfO
₂
) and Titanium oxide (TiO
₂
) seem to be better options for dielectric medium of the device. The impact of the said changes is also observed and analyzed in I-V characteristics of the device.