Utilization of transversal Pockels effect in intense electric field sensing

In this work, we proposed to implement a controlled high voltage sensor based on transversal Pockels effect. The work is carried out numerically and experimentally using (BGO, Bi
₄
Ge
₃
O
₁₂
) crystal. and simulation by the Finite Element Method (FEM) for the system is introduced to study different design parameters in order to optimize the design of the system and to find the relation between the electric field intensity within the crystal and the value of the total applied voltage depending on shape of the crystal, the permittivity of the material and the distance between the electrodes. AC high voltages were measured by the system in transversal configuration with a relative error of 3%. Due to the ambiguity of the measurement for values higher than Vπ/2, a numerical solution is proposed, depending on the variation of electrodes separation. Thus the ambiguity is removed and the measurement range is increased.