High efficiency power converter with SiC power MOSFETs for pulsed power applications

This paper presents a high efficiency SiC power converter in pulsed power applications. SiC Power MOSFETs have 7~10 times lower switching loss than Silicon counterparts. However, because of the large depletion capacitance, the SiC device switching loss will be higher than silicon device at zero current. Therefore, loss reduction method is proposed to further improve SiC gradient driver efficiency. A 2700V, 1300A SiC gradient driver prototype is designed, fabricated and tested.