A 14–31 GHz 1.25 dB NF enhancement mode GaAs pHEMT low noise amplifier

In this paper, we report a wide bandwidth low noise amplifier (LNA) fabricated in a 0.15 μm enhancement mode (Emode) gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The lna employs source degeneration along with a resistive feedback network to achieve low noise figure (NF) over a wide bandwidth. Experimental results show that the LNA exhibits a maximum gain of 30 dB and maintains higher than 25 dB from 14 to 31 GHz. The measured minimum NF is 1.25 dB along with 17.5 dBm output 1-dB compression point (OP1dB) and 28.5 dBm output 3
^rd
order intercept point (OIP3).